Product Summary

The IHW20N120R2 is a Reverse Conducting IGBT with monolithic body diode.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)DC collector current: TC = 25℃: 40 A, TC = 100℃: 20 A; (3)Pulsed collector current, tp limited by Tjmax: 60 A; (4)Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175℃): 60 A; (5)Diode pulsed current, tp limited by Tjmax: 30 A; (6)Gate-emitter voltage: ±20 V; (7)Transient Gate-emitter voltage (tp < 5 ms): ±25 V; (8)Power dissipation TC = 25℃: 330 W; (9)Operating junction temperature: -40 to +175 ℃; (10)Storage temperature: -55 to +175 ℃; (11)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260 ℃.

Features

Features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)Trench and Fieldstop technology for 1200 V applications offers : very tight parameter distribution, high ruggedness, temperature stable behavior; (4)NPT technology offers easy parallel switching capability due to; (5)positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Qualified according to JEDEC1 for target applications; (8)Pb-free lead plating; RoHS compliant.

Diagrams

IHW20N120R
IHW20N120R
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable 
IHW20N120R2
IHW20N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable 
IHW20N120R3
IHW20N120R3
Infineon Technologies
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Data Sheet
0-1: $1.81
1-10: $1.68
10-100: $1.54
100-250: $1.45
IHW20N135R3
IHW20N135R3

IGBT 1350V 20A 310W TO247-3
Data Sheet
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IHW20T120
IHW20T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 20A
Data Sheet
0-97: $3.70
97-100: $3.03
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250-500: $2.45
IHW25N120R2
IHW25N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
Data Sheet
0-1: $3.13
1-10: $2.80
10-100: $2.29
100-250: $2.06