Product Summary

The IHW20N120R2 is a Reverse Conducting IGBT with monolithic body diode.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)DC collector current: TC = 25℃: 40 A, TC = 100℃: 20 A; (3)Pulsed collector current, tp limited by Tjmax: 60 A; (4)Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175℃): 60 A; (5)Diode pulsed current, tp limited by Tjmax: 30 A; (6)Gate-emitter voltage: ±20 V; (7)Transient Gate-emitter voltage (tp < 5 ms): ±25 V; (8)Power dissipation TC = 25℃: 330 W; (9)Operating junction temperature: -40 to +175 ℃; (10)Storage temperature: -55 to +175 ℃; (11)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260 ℃.

Features

Features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)Trench and Fieldstop technology for 1200 V applications offers : very tight parameter distribution, high ruggedness, temperature stable behavior; (4)NPT technology offers easy parallel switching capability due to; (5)positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Qualified according to JEDEC1 for target applications; (8)Pb-free lead plating; RoHS compliant.

Diagrams

IHW20N120R3
IHW20N120R3
Infineon Technologies
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Data Sheet
0-1: $1.81
1-10: $1.68
10-100: $1.54
100-250: $1.45
IHW20N135R3
IHW20N135R3

IGBT 1350V 20A 310W TO247-3
Data Sheet
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IHW20T120
IHW20T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 20A
Data Sheet
0-97: $3.70
97-100: $3.03
100-250: $2.74
250-500: $2.45
IHW25N120R2
IHW25N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
Data Sheet
0-1: $3.13
1-10: $2.80
10-100: $2.29
100-250: $2.06
IHW20N120R2
IHW20N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable 
IHW20N120R
IHW20N120R
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable