(China (Mainland))
Product Summary
The FGA15N120ANTD is a 1200V NPT Trench IGBT. It offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage:1200V; (2)Gate-Emitter Voltage:卤 20V; (3)Collector Current:@ TC = 25鈩?30A; (4)Collector Current:@ TC = 100鈩?15A; (5)Pulsed Collector Current:45A; (6)Diode Continuous Forward Curren:@ TC = 100鈩?15A; (7)Diode Maximum Forward Current:45A; (8)Maximum Power Dissipation:@ TC = 25鈩?186W; (9)Maximum Power Dissipation:@ TC = 100鈩?74W; (10)Operating Junction Temperature:-55鈩?to +150鈩? (11)Storage Temperature Range:-55鈩?to +150鈩? (12)Maximum Lead Temp. for soldering Purposes, 1/8鈥?from case for 5 seconds:300鈩?
Features
Features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25鈩? (3)Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25鈩? (4)Extremely enhanced avalanche capability.
Diagrams
<P><IMG src="http://www.seekic.com/uploadfile/ic-mfg/20115513254906.jpg" border=0></P>
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 FGA15N120ANTD |
Other |
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Data Sheet |
Negotiable |
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FGA15N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench IGBT |
Data Sheet |
Negotiable |
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FGA15N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench |
Data Sheet |
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