(China (Mainland))
Product Summary
The IHW15N120R2 is a Reverse Conducting IGBT with monolithic body diode.
Parametrics
Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V ; (2)DC collector current: 30 A at TC = 25℃, 15 A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax: 45; (4)Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C): 45; (5)Diode forward current: 30 at TC = 25℃, 15 at TC = 100℃; (6)Diode pulsed current, tp limited by Tjmax: 45; (7)Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms): ±20 V; (8)Power dissipation TC = 25℃: 357 W; (9)Operating junction temperature: -40 to +175 ℃ ; (10)Storage temperature: -55 to +175 ℃.
Features
Features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)Trench and Fieldstop technology for 1200 V applications offers: very tight parameter distribution, high ruggedness, temperature stable behavior; (4)Low EMI; (5)Qualified according to JEDEC1 for target applications; (6)Pb-free lead plating; RoHS compliant; (7)Complete product spectrum and PSpice Models.
Diagrams
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 IHW15N120R |
Infineon Technologies |
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
Data Sheet |
Negotiable |
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IHW15N120R2 |
Infineon Technologies |
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
Data Sheet |
Negotiable |
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IHW15N120R3 |
Infineon Technologies |
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body |
Data Sheet |
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IHW15T120 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 15A |
Data Sheet |
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