Product Summary

The IHW20N120R3 (H20R1203) is a Reverse conducting IGBT with monolithic body diode.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)diode pulsed current:60.0A; (3)gate-emitter voltage:±20V; (4)transient gate-emitter voltage:±25V; (5)power dissipation Tc=25℃:310.0W; (6)power dissipation Tc=100℃:155.0W; (7)operating junction temperature:-40℃ to +175℃; (8)storage temperature:260℃.

Features

Features: (1)Powerful monolithic body diode with low forward voltage designed for soft commutation only; (2)Low EMI; (3)Qualified according to JEDEC J-STD-020 and JESD-022 for target applications; (4)Pb-free lead plating; RoHS compliant.

Diagrams

IHW20N120R
IHW20N120R
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable 
IHW20N120R2
IHW20N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A
Data Sheet
Negotiable 
IHW20N120R3
IHW20N120R3
Infineon Technologies
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Data Sheet
0-1: $1.81
1-10: $1.68
10-100: $1.54
100-250: $1.45
IHW20N135R3
IHW20N135R3

IGBT 1350V 20A 310W TO247-3
Data Sheet
0-240: $2.40
IHW20T120
IHW20T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 20A
Data Sheet
0-97: $3.70
97-100: $3.03
100-250: $2.74
250-500: $2.45
IHW25N120R2
IHW25N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A
Data Sheet
0-1: $3.13
1-10: $2.80
10-100: $2.29
100-250: $2.06