Product Summary

The IKW75N60T is an IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.

Parametrics

Maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current, limited by Tjmax, IC: 80A at TC = 25℃; 75A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 225A; (4)Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175℃): 225A; (5)Diode forward current, limited by Tjmax, IF: 150A at TC = 25℃; 75A at TC = 100℃; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 225 A; (7)Gate-emitter voltage, VGE: ±20 V; (8)Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150℃, tSC: 5 μs; (9)Power dissipation TC = 25℃, Ptot: 428 W; (10)Operating junction temperature, Tj: -40 to +175℃; (11)Storage temperature, Tstg: -55 to +175℃; (12)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.

Features

Features: (1)Very low VCE(sat) 1.5 V (typ.); (2)Maximum Junction Temperature 175 ℃; (3)Short circuit withstand time -5μs; (4)Designed for : Frequency Converters; Uninterrupted Power Supply; (5)Trench and Fieldstop technology for 600 V applications offers : very tight parameter distribution; high ruggedness, temperature stable behavior; very high switching speed; low VCE(sat); (6)Positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode; (10)Complete product spectrum and PSpice Models.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IKW75N60T
IKW75N60T
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 75A
Data Sheet
0-130: $4.18
130-250: $3.85
250-500: $3.50
500-1000: $3.05
IKW75N60TA
IKW75N60TA
Infineon Technologies
IGBT Transistors 600V 75A 100nA
Data Sheet
0-142: $5.20
142-250: $4.74
250-500: $4.43
500-1000: $4.07