(China (Mainland))
Product Summary
The FGA25N120ANTD is a 1200V NPT Trench IGBT. It offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage:1200V; (2)Gate-Emitter Voltage:± 20V; (3)Collector Current: @ TC = 25℃:50A; (4)Collector Current:@ TC = 100℃:25A; (5)Pulsed Collector Current:90A; (6)Diode Continuous Forward Current:@ TC = 100℃:25A; (7)Diode Maximum Forward Current:150A; (8)Maximum Power Dissipation:@ TC = 25℃:312W; (9)Maximum Power Dissipation:@ TC = 100℃:125W; (10)Operating Junction Temperature:-55℃ to +150℃; (11)Storage Temperature Range:-55℃ to +150℃.
Features
Features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25℃; (4)Extremely enhanced avalanche capability.
Diagrams
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 FGA25N120ANTD |
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FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
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FGA25N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
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